Structural modification of glassy chalcogenide semiconductors under the action of femtosecond laser radiation

This paper discusses the structural changes induced by laser radiation with wavelength λ=800nm, pulse width τ=100fs, and repetition rate f=80MHz in bulk samples of glassy semiconductors. As a result of this work, waveguide structures were created in As2S3 and 0.15(Ga2S3)-0.85(GeS2):Er3+[C(Er3+)=1.2at%] glasses under various conditions of laser action (the recording method, the speed and number of scans). The structural changes induced by femtosecond laser radiation in a sample of As2S3 glass were investigated by Raman scattering.