Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash ® after program/erase cycling

In this paper, program/erase (P/E) cycling characteristics of the novel p-type SONOS NeoFlash ® has been thoroughly discussed. The change of vertical location in the nitride and density distribution in energy span of the trapped charges after cycling has been observed. Different ONO thickness and process of nitride film results in different amount of cycling degradation. The contribution of interface traps and ONO trapped/residue-charges to P/E cycling degradation has been successfully distinguished.