Old Web
English
Sign In
Acemap
>
Paper
>
Analysis of dependence of dVCE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor
Analysis of dependence of dVCE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor
2020
Yoko Iwakaji
Tomoko Matsudai
Tatsunori Sakano
K Takao
Keywords:
Materials science
Optoelectronics
Insulated-gate bipolar transistor
double gate
turn off
Correction
Source
Cite
Save
Machine Reading By IdeaReader
7
References
0
Citations
NaN
KQI
[]