Old Web
English
Sign In
Acemap
>
Paper
>
TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET
TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET
2019
Asai Hidehiro
Wen-Hsin Chang
Okada Naoya
Fukuda Koich
Irisawa Toshifumi
Keywords:
Optoelectronics
Communication channel
Contact resistance
Materials science
Field effect
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]