Characteristics of Si and SiC detectors at registration of Xe ions

The results of an investigation of silicon (Si) and silicon carbide (SiC) detectors when irradiated with a beam of Xenon (Xe) ions are presented. The irradiation was carried out at the IC-100 cyclotron, JINR, Dubna. The effect of the Pulse Height Defect (PHD) in registering Xe ions with energies 165, 82 and 45 MeV is shown to be twice as large for SiC detectors as that for Si detectors. It is also shown that degradation of SiC detectors irradiated with heavy Xe ions occurs at doses an order of magnitude greater than for Si detectors. The measurement method described, including continuous detector calibration by alpha-particles, makes it possible to simultaneously control the characteristics of detectors during irradiation and determine the energy of a beam of ions.