InAsP∕InGaAs composite quantum well for separate TE and TM gain

Composite InAsP∕InGaAs quantum wells are a promising candidate for realizing polarization-independent semiconductor optical amplifiers at 1.55μm. We investigated the possibility of 8nm tensile-strained InGaAs well surrounded by two compressively-strained InAsP layers, for achieving separate gain for TE and TM polarized light. The InAsP layers provide strain compensation while simultaneously shifting the band gap to 1.55μm. The edge photoluminescence spectra shows that the gain for TE and TM polarized light is in the order of (3:1).