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Process Development of Dislocation-Free SiGe P-Channel in FinFET Technology
Process Development of Dislocation-Free SiGe P-Channel in FinFET Technology
2021
Bo Su
Wu-feng Deng
Chao Yin
En-Ning Zhang
Xing Ke
Hansu Oh
Jie Zhao
Bin Ye
Hai-yang Zhang
Keywords:
dislocation free
Optoelectronics
Materials science
p channel
process development
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