First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM
2011
Abstract In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.
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