FET-type hydrogen sensor with short response time and high drift immunity

New methods were studied to reduce response time and threshold voltage drift of the FET-type hydrogen sensor. The advantages of the Pt-Ti-O gate over other sensor gate materials were demonstrated. Extending Langmuir's dissociative adsorption theory to non-equilibrium states enabled us to reduce the response time, and the negative gate bias operation with P-FET-type sensor reduced the drift. Thus, we successfully achieved both a response time of 0.8 s and high drift immunity.