Growth and properties of SrBi2TaNbO9 ferroelectric thin films using pulsed laser deposition

Abstract High quality SrBi 2 TaNbO 9 (SBTN) ferroelectric thin films were fabricated on platinized silicon by pulsed laser deposition. Microstructure and ferroelectric properties of the films were characterized. Optical fatigue (light/bias) for the thin films was studied and the average remanent polarization dropped by nearly 55% due to the bias/illumination treatment. Optical properties of the thin films were studied by spectroscopic ellipsometry (SE) from the ultraviolet to the infrared region. Optical constants, n  ∼ 0.16 in the infrared region and n  ∼ 2.12 in the visible spectral region, were determined through refractive index functions. The band gap energy is estimated to be 3.93 eV.