SrNbO2N as a Water‐Splitting Photoanode with a Wide Visible‐Light Absorption Band.

SrNbO2N, an n-type semiconductor with a band gap of ca. 1.8 eV, is deposited on a fluorine-doped tin oxide (FTO) substrate by electrophoretic deposition followed by calcination in air at 673 K for 0.5 h.