Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors

The manipulation of donor-like defects, including generation, suppression and diffusion, in metal oxide (MO) thin-film transistors (TFTs) has been reviewed systematically. Based on this, the defect-populated source/drain (S/D) regions and defect-free channel region are realized for high-performance TFTs, and even the location of self-aligned (SA) homojunctions can be accurately controlled.