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Digital Alloy SMART (InN) 1 /(GaN) 4 Grown by Low NH 3 Partial Pressure MOVPE
Digital Alloy SMART (InN) 1 /(GaN) 4 Grown by Low NH 3 Partial Pressure MOVPE
2015
Kazuhide Kusakabe
Keywords:
Optoelectronics
Partial pressure
Metalorganic vapour phase epitaxy
Alloy
Materials science
nitride semiconductors
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