Room-temperature anisotropic, thermoelectric, and electrical properties of n-type (Bi2Te3)90 (Sb2Te3)5 (Sb2Se3)5 and compensated p-type (Sb2Te3)72 (Bi2Te3)25 (Sb2Se3)3 semiconductor alloys

The anisotropy ratios (parallel to the c axis versus perpendicular to the c axis) for the electrical resistivity, Seebeck coefficient, and thermal conductivity of horizontal Bridgman-grown n-type (Bi2Te3)90 (Sb2Te3)5 (Sb2Se3)5 and p-type (Sb2Te3)72 (Bi2Te3)25 (Sb2Se3)3 were measured at 300 K. The orientation having the largest thermoelectric figure of merit was perpendicular to the zone axis of the c planes (along the natural growth direction). For the n-type alloy, the maximum thermoelectric figure of merit was determined to be 3.2×10−3/K. For the p-type alloy, the maximum thermoelectric figure of merit was determined to be 3.6×10−3/K when compensated with tellurium only, and 3.8×10−3/K when compensated with both tellurium and iodine. These values represent a significant increase over previously reported p-type thermoelectric figure of merit values. Hall coefficient data coupled with Seebeck coefficient measurements suggest a difference in carrier transport phenomena caused by an increased compensation o...