High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

2012 
A novel abrasive-free planarization method “called catalyst-referred etching (CARE)” has been invented. After the CARE process, a flat and well-ordered surface is obtained as observed by atomic force microscopy (AFM). To determine the atomic structure at the topmost surface, in this study, CARE-processed surfaces of a standard commercial 2-inch n-type 4H-SiC (0001) wafer cut 8o off-axis toward the [1-100] direction were observed by high-resolution transmission electron microscopy (HRTEM). The HRTEM images showed alternating wide and narrow terraces and a single-bilayer step height. The relationship between the width of the terraces and the 4H-SiC crystal structure has been clarified.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    10
    References
    4
    Citations
    NaN
    KQI
    []