Lifetime study of N impurity states in GaAs1−xNx(x=0.1%) under hydrostatic pressure

The lifetimes of a series of N-related photoluminescence lines (A2–A6) in GaAs1−xNx (x=0.1%) were studied under hydrostatic pressures at ∼30K. The lifetimes of A5 and A6 were found to increase rapidly with increasing pressure: from 2.1ns at 0GPa to more than 20ns at 0.92GPa for A5 and from 3.2ns at 0.63GPa to 10.8ns at 0.92GPa for A6. The lifetime is found to be closely correlated with the binding energy of the N impurity states, which is shown either in the pressure dependence for a given emission line or in the lifetime variation from A2 to A6.