Integration of Optical Receivers for On-Chip Interconnects

Compact germanium waveguide photodetector with 10fF capacitance, 40Gbps bandwidth and 0.4A/W responsivity was monolithically integrated into front-end CMOS process utilizing a rapid-melt-growth technique. In the avalanche regime, gain-bandwidth product above 350GHz was achieved at ~3V. Article not available.