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MOVPE growth of GaInP GaAs hetero-bipolar-transistors using CBr 4 as carbon dopant source
MOVPE growth of GaInP GaAs hetero-bipolar-transistors using CBr 4 as carbon dopant source
1997
P. Kurpas
E. Richter
Manabu Sato
F. Brunner
D. Gutsche
Markus Weyers
Keywords:
Inorganic chemistry
Metalorganic vapour phase epitaxy
Heterostructure-emitter bipolar transistor
Dopant
Bipolar junction transistor
Chemistry
Carbon
Correction
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