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PCRAM performances improvement with nitrogen doped GeTe material for embedded applications
PCRAM performances improvement with nitrogen doped GeTe material for embedded applications
2010
E. Gourvest
Christophe Vallee
F. Fillot
Herve Roussel
L. Perniola
J.C. Bastien
A. Bastard
S. Loubriat
Anne Roule
Sandrine Lhostis
Sylvain Maitrejean
Keywords:
Optoelectronics
embedded applications
Materials science
nitrogen doped
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