Characterisation of a new batch of ion implanted Bi in silicon specimens for use as primary reference surface standards

Abstract A set of 100 silicon specimens has been prepared with a nominal implanted dose of 5×10 15 Bi atoms cm −2 . The samples have been analysed by Rutherford backscattering. The lateral uniformity of the bismuth implantation has been tested by the intercomparison of all samples. Absolute calibration for six of the samples has been achieved by comparison with carefully deposited thin films.