Progress in High Power Diode Laser Pumps for High-Energy Class Mid Infra-Red Lasers

Epitaxial design development in 780 nm diode lasers for lower loss and lower bias-driven leakage enables increases in power (to 210 W) and conversion efficiency (to 57% at 60 W) in high repetition-rate (10 ms, 10 Hz), wide-aperture (1200 μm) devices ready for use in pumping high-energy-class thulium-doped solid-state lasers.