Method for producing semiconductor element and method for producing laminate

Provided are: a method for producing a semiconductor element, which effectively suppresses die shift and exhibits excellent separation properties between a temporary adhesive layer and a molding layer; and a method for producing a laminate. A method for producing a semiconductor element, wherein a member that has a temporary adhesive layer on a carrier substrate and a die that has a circuit on at least one surface thereof are pressure-bonded with each other at a temperature T1 in such a manner that the temporary adhesive layer is in contact with the die, and after forming a molding layer at a temperature T2 on a surface of the die, said surface being on the reverse side of the surface in contact with the temporary adhesive layer, the carrier substrate is separated at a temperature of 40°C or less. In this connection, the temperature T1 is a temperature at which the melt viscosity of the temporary adhesive layer as measured at a measurement frequency of 10 Hz is from 4,000 Pa·s to 10,000 Pa·s (inclusive); and the temperature T2 is a temperature at which the melt viscosity of the temporary adhesive layer as measured at a measurement frequency of 10 Hz is 4,000 Pa·s or more.