Diffusion of Zn in CuInSe2 bulk crystals

Abstract Using bulk crystals of CuInSe 2 (CIS) grown in an evacuated sealed quartz ampoule, diffusion of zinc in the temperature range (550–700 °C) was investigated. The computation of the parameters showed a coefficient of diffusion D Zn varying from 10 −11 to 10 −10  cm 2  s −1 and an energy of activation of 0.41 eV. The results of optical analysis made on doped CuInSe 2 showed that Zn can act as a donor and the energy E A of the acceptor level was found 23 meV.