Improved Performance of CH3NH3PbI3-xClx Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures.
2020
The rapidly growing demand for fast information storage and processing has driven the development of resistive random access memories (RRAMs). Recently, RRAMs based on organometal halide perovskite...
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
53
References
17
Citations
NaN
KQI