MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET

The electron mobility and the surface carrier density in the channel layer of a C-face 4H-SiC MOSFET was studied using a Hall measurement and a split C-V measurement. Total surface carrier density and the effective mobility were extracted experimentally using the split C-V measurement. It was found that the difference of the peak Hall mobility and the peak effective mobility was less than 20%. And the total trap density was the order of the 1012 cm-2. The cause of the relatively small difference between the Hall mobility and the effective mobility was discussed.