TEM Study of the Silicidation Process in Pt/Si and Ir/Si Structures

The annealing of Pt/Si and Ir/Si structures (300, 400 and 500°) leads to the formation of platinum or iridium silicides, respectively. However, the silicidation process proceeds in different ways in both structures. In the Pt/Si structure the silicidation process is completed at each temperature. Annealing of the Ir/Si structure at 300 and 400°C causes only a partial reaction and the formation of a very thin amorphous iridium silicide layer at the Ir/Si interface. At 500°C the reaction is completed and forms a crystalline silicide layer, which consists of two phases.