Hole Localization Inhibits Charge Recombination in Tin−Lead Mixed Perovskites: Time−Domain Ab Initio Analysis

Using time domain density functional theory combined with nonadiabatic molecular dynamics, we demonstrate that the Sn dopants favor forming localized hole states with different extent at low and high doping concentrations, mimicking the small and large polarons, while retain the electron wave functions comparable with the pristine system, leading to nonadiabatic coupling decreasing by a factor of 45% and 38% and bandgap reduction by 0.04 and 0.27 eV, respectively. Furthermore, replacing heavier Pb with lighter Sn increases atomic fluctuations and accelerates loss of quantum coherence, in particular even faster at higher Sn doping concentration. As a result, the interplay among the bandgap, NA coupling, and decoherence time delays the electron–hole recombination by a factor of 3.5 and 1.3 at low and high doping concentration. Our study reveals the atomistic mechanisms of suppressed recombination dependence on Sn doping concentration, providing a new way to design high performance mixed perovskites.