Effect of thermal annealing on SHI irradiated indium implanted glassy carbon

Abstract The effects of swift heavy ion irradiation on implanted glassy carbon, the modification and migration of indium after vacuum annealing have been investigated. Radiation damage was introduced to the glassy carbon substrates after room temperature implantation by 360 keV indium ions to a fluence of 2.0 × 1016 ions/cm 2. The implanted samples were subsequently irradiated at room temperature by swift heavy ions (167 MeV Xe 26+ ions). Isochronal annealing of both sets of samples from 200 to 600 °C for 1 h was performed in vacuum. The SHI irradiation, induced some restructuring in the damaged glassy carbon substrates. Vacuum annealing of the SHI irradiated samples gave rise to recovery and the diffusion of implanted In which was different from that of the as-implanted sample. Higher retention was observed at each temperature for SHI irradiated samples compared to as-implanted samples. The diffusion coefficients of the SHI irradiated samples were lower than for un-irradiated sample.