GaAs nanowhiskers grown by molecular beam epitaxy on GaAs(111)B surface activated by Au: theory and experiment
2005
GaAs nanowhiskers are grown by molecular beam epitaxy (MBE) on the GaAs(111)B surface activated by Au at
different conditions (Au layer thickness, GaAs flux, substrate temperature, effective thickness of deposited GaAs) and
characterized by scanning electron microscopy technique. The dependence of the nanowhisker height on the size of Au-
GaAs alloy drops is investigated. A kinetic model of nanowhiskers formation in the vapor-liquid-solid growth
mechanism is proposed. In particular, the nanowhiskers growth rate is found as a function of the drop size, system
energetics, and MBE growth conditions. The predictions of a theoretical model are compared to the results of
experimental observations. It is demonstrated that the MBE method enables one to fabricate nanowhiskers ensembles
with tunable structural properties (height, lateral size distribution, surface density) by changing the Au layer thickness,
the amount of deposited GaAs, and MBE growth conditions.
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