FBC'sPotential of6F2Single CellOperation inMulti-Gbit Memories Confirmed byaNewlyDeveloped MethodforMeasuring Signal SenseMargin

anoptimum cell design without degrading theretention time. A 6F2single cell (one-cell-per-bit) operation ofthefloating Operation ofFBCandMemoryYield bodyRAM (FBRAM)issuccessfully demonstrated forthe first timewith morethan 60%yield of16Mbit areainawafer. Fig. 1showstheoperational principle oftheFBC.Data Thesignal sense margin (SSM)atactual readconditions is states arestored intheformofthefloating body potential. To found towellbackupthefunctional results. Theparasitic write data "1", byapplying ahigh voltage tothebit-line (BL), resistance inthesource anddrain formed under theFBC's holes arecreated byimpact ionization andaccumulated inthe spacers canbeoptimized formaking theSSM aslarge as floating body. Towrite data"0", byapplying a negative 8gAat±4.5o without sacrificing theretention time. voltage totheBL,holes areextracted fromthebody. The stored states canbedistinguished using MOSFET current