High-Performance Graphene-Based Electrostatic Field Sensor

In this letter, a high-performance graphene-based electrostatic field sensor is demonstrated. Combining the ultrahigh mobility of graphene and the long lifetime of carriers in SiO2/lightly doped Si substrate, our device achieves a fast response of $\sim 2~\mu \text{s}$ and detection limit of electrostatic potential as low as ~5 V, which is improved by an order of magnitude as compared with commercial products. The proposed device structure opens a promising pathway to high-sensitive electrostatic detection, and also greatly facilitates the development of novel sensors.