High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers

By low-pressure metalorganic chemical vapor depostion (LP-MOCVD) system,InGaAs/AlGaAs graded-index separate-confinement heterostructure strained quantum Well lasers are grown with carbon doped the upper cladding layer and the capping layer. Carbon tetracholride (CCl4) is used as the carbon source. 100μm oxide stripe lasers are fabricated,and the laser output power per facet (uncoated) reaches 1. 2W with 2A injection current under the room temperature continuous wave (CW) operation. The threshold current density is 150A/cm2 with 1000μm cavity length. The slope efficiency per facet reaches 0. 53W/A, and the total external differential quantum efficiency is above 85%. The relations between the threshold current densities, the differential quantum efficiency and the cavity length are studied.