Subthreshold Modeling of Graded Channel Double Gate Junctionless FETs

In this paper, 2-D analytical models of channel central potential, threshold voltage, subthreshold current and subthreshold swing for graded channel double gate (GC-DG) Junctionless FETs (JLFETs) have been presented. The 2-D Poisson’s equation has been solved to determine the channel central potential by parabolic approximation method with appropriate boundary conditions. The minimum potential for the channel is obtained from the channel potential expression in order to formulate threshold voltage, subthreshold current and subthreshold swing. The validity of the model results has been verified using TCAD numerical data obtained from 2-D ATLAS device simulator from Silvaco.