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Influence of Surface Recombination on Forward CurrentVoltage Characteristics of Mesa GaN $\hbox{p}^
Influence of Surface Recombination on Forward CurrentVoltage Characteristics of Mesa GaN $\hbox{p}^
2012
Kazuhiro Mochizuki
Kazuki Nomoto
Yoshitomo Hatakeyama
Hideo Katayose
Tomoyoshi Mishima
Naoki Kaneda
Tadayoshi Tsuchiya
Akihisa Terano
Takashi Ishigaki
T. Tsuchiya
Ryuta Tsuchiya
Tohru Nakamura
Keywords:
Physics
Electronic engineering
Gallium nitride
Optoelectronics
Schottky diode
Recombination
Correction
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