Electronic, magnetic, and spin‐polarized transport properties of hybrid graphene/boron‐nitride nanoribbons having 5‐8‐5 line defects at the heterojunction

Using the spin-polarized density functional theory, we have investigated electronic, magnetic, and spin-polarized transport properties of hybrid boron-nitrde/graphene (BNC) nanoribbons having the BB and NN line defect at the heterojunction. Our results show that the defective systems behave as robust spin-selective half-semiconductor in the whole range of the graphene nanoribbon width considered in this work. Application of an electric field gives rise to antiferromagnetic half-metallic behavior in both systems. The range of electric field maintaining the half-metallicity is much larger for the BB line defect system than for the NN line defect system. Beyond a threshold of field intensity, the NN line defect system becomes nonmagnetic semiconductor, while the BB line defect system behaves as ferromagnetic metal with spin density located at the heterojunction. Finally, the spin-polarized transport calculation reveals that both systems can be efficient spin filters.