Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods

The confined states in ultra-thin Ge layers on oxide are investigated using three different state-of-the-art full-band methods. Contrary to the prediction of the simple effective mass approximation (EMA) and multiband-models that decoupled the Conduction Bands (CB) and the Valence Bands (VB), full-band calculations predicts much lower subband energy shifts due to quantum confinement.