The first results of siliconization on SWIP-RFP device

Abstract The first results of reversed field pinch (RFP) and ultra low safety factor (ULQ) plasma experiments with siliconization on SWIP-RFP device are presented in this paper. The siliconization decreases the impurity concentrations in the plasma and increases the configuration sustainment time. Ion temperature has been estimated with the CV line of the visible light spectra and the broadening of CIII lines in vacuum ultraviolet (VUV) region. The anomalous ion heating as well as the anomalous resistance were observed.