Modeling and dynamic simulation of ultraviolet induced growing interfaces

Abstract A solid-on-solid (SOS) model to simulate SiN:H dynamic surface characteristics in ultraviolet chemical vapor deposition (CVD) onto indium phosphide is presented. It is recognized that the nucleation process occurs at an UV induced active charged center on the surface of the substrate. Photolysis rates are determined using bond dissociation energies for molecular processes to generate active adsorbed species. The microscopic activation energy in elementary processes depends on the configuration of neighbouring atoms. Monte Carlo–Metropolis method using microscopic activation energy barriers is taken into account in molecular processes by a three-dimensional algorithm. The model includes lattice coordination and atom–atom interactions out to third-nearest neighbours. The molecular events are chosen with a probability of occurrence that depends on the kinetic rates at each atomic site. Stable incorporation of main species is enabled. Three-dimensional simulation of a growing interface indicates validation of a thermally activated rough–smooth transition for submicronic thick layers in the Kardar–Parisi–Zhang model.