Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

AlxGa1-xN based avalanche photodiodes grown on sapphire substrate with Al-contents of x = 0.65 and x = 0.60 have been examined under back- and frontside illumination with respect to their avalanche gain properties. The photodetectors suitable for the solar-blind ultraviolet spectral regime show avalanche gain for voltages in excess of 30 V reverse bias in the linear gain mode. Devices with a mesa diameter of 100 μm exhibit stable avalanche gain below the break through threshold voltage, exceeding a multiplication gain of 5500 at 84 V reverse bias. A dark current below 1 pA can be found for reverse voltages up to 60 V.