A method of injecting a dopant into the substrate to be processed, and the plasma doping apparatus

To provide a method for implanting dopants into the substrate to be processed. The method of an embodiment, supplies a step of preparing a substrate to be processed, (b) into the processing container, a doping gas containing AsH In the step of implanting dopant, the ratio of the partial pressure of hydrogen to the total pressure of the gas in the processing vessel is set to 0.003 inclusive 0.0015.