A process for the manufacture of optoelectronic semiconductor chips

A process for the manufacture of optoelectronic semiconductor chip comprising the steps of: A) providing a supporting substrate (1), B) applying a semiconductor layer sequence (2) on the carrier substrate (1), and C) separation of the semiconductor layer sequence ready-prepared (2) of the carrier substrate (1) (by means of laser radiation R) (with a wavelength L) (through the support substrate 1) therethrough, in which - having the semiconductor layer sequence (2), in the direction away from the carrier substrate (1), a buffer layer stack (20) and a functional stack (22), - the functional stack (22) comprises at least an active layer (21) for generating light, - at least one absorber layer (23) is within the buffer layer stack (20), - the absorber layer (23) of a material for absorbing the laser radiation (R) is formed and all of the remaining layers (24, 25) of the buffer layer stack (20) for the laser radiation (R) is permeable, and is made in step C) peeling of the semiconductor layer sequence (2) from the carrier substrate (1) in the area of ​​the absorber layer (23), - wherein the absorber layer (23) in step (C) in a maximum of radiation intensity S) of the laser radiation (R) is in the semiconductor layer sequence, and wherein by a structure of the buffer layer stack (20) has a power density of the incident laser radiation (R) in the absorber layer (23) is interferometrically enhanced.