Influence of HfAlO x in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT

This paper analyzes the effect of a HfAlOx dielectric in a dual-channel (DC)single-gate (SG) metal oxide semiconductor high-electron-mobility transistor (DCSG-MOSHEMT) on improving device performance metrics. The small-signal analog/RF and noise performance of the device are explored in detail. The physics-based TCAD simulator tool is utilized to characterize the device. A peak drain current of 1.52 mA/µm is achieved due to superior sheet carrier density (ns) of 1.5×1018 cm−3 and low ON resistance. Further, a high positive threshold voltage (VT) of 0.214 V and a peak transconductance of 1.8 ms/µm is achieved with HfAlOx as the dielectric. Moreover, high cutoff frequency (fT) of 530 GHz and maximum frequency of oscillation (fmax) of 840 GHz at Vds = 0.5 V is achieved. The device exhibits a minimum noise figure of 1.32 dB at Vgs = 0.3 V and Vds = 0.5 V. With low noise over a large bandwidth and high-frequency performance, this device can be utilized to design low-noise amplifiers (LNA) for broadband applications.