Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures

The optical transition energy in GaInNAs/GaAs QW structures is investigated from theoretical and experimental aspects.The discrete-level energy and the band-gap energy are calculated using the effective-mass approximation and two-level repulsion model,respectively.The changes in the band-gap energy due to strains are also discussed.The theoretical and experimental transition energies of GaInNAs/GaAs quantum well structures are compared,and they agree well.The effect of N on the transition energies of GaInNAs/GaAs quantum well structures is analyzed simply