Single-photon avalanche detectors for low-light-level imaging

Linear arrays of single photon avalanche detectors (SPADs) designed for use in low light level imaging applications were fabricated using a novel planar process that is compatible with standard CMOS technology. The device characteristics for these arrays are presented here to investigate their suitability for high efficiency low light level imaging. A new scheme is proposed to eliminate the problem of optical crosstalk between pixels in the array by introducing a trench isolation process coupled with silicon-on-insulator (SOI) technology.