GaAs/GaAlAs multiple quantum well electroreflectance modulators

ABSTRACT In this paper, physical analyses on the characterization of the electroreflectance modulator are concerned, whichinclude quantum confined Stark effect and asynunetric Fabry-Perot cavity effect and so on. Experimental results areprovided to demonstrate the properties of normally-off and normally-on devices. The developed technology is used totune the mode to the proper position to improve the contrast ratio of modulators. keyword multiple quantum well, electroreflectance modulator, optical switch array 1 .JNTRODUCTIONOptics as the carrier of information can bring high density,low power,high speed interconnections in paralleloperation. To do so, optoelectronic devices are needed to be of two dimensional integration in which opticalinputs/outputs,electrical amplifying and controlling circuits are included. At present, the easily two-dimensional integration in large scale and also the most practical is of electroreflectance modulators and their hybrid integration Witl1 microelectronics, so called Smart Pixels.