Defects in swift heavy ion irradiated n-4H-SiC

Abstract We have used confocal Raman spectroscopy, atomic force microscopy (AFM), Binary collision approximations and Deep level transient spectroscopy (DLTS) to study the defects introduced in n-type 4 H- SiC by 167 MeV Xe 26+ ions (swift heavy ions (SHIs)). Moderately doped epitaxial layers were irradiated with SHIs to a fluence of 5 × 10 11  cm −2 at room temperature. Raman spectroscopy was used to investigate the effects of irradiation on the crystal structure. Raman intensity reduced after irradiation but the overall bond structure was conserved. Cluster spectra from confocal Raman spectroscopy showed a damage impact that was consistent with SRIM simulations. AFM showed that the incident radiation resulted in elongated protrusions. The virgin samples contained the E 0.09 , E 0.12 , E 0.15 and E 0.65 as the only electrically active defects. After irradiation the E 0.40 and E 0.71 defects were introduced.