A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers are designed at 2.4 GHz using the experimentally calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.