Microwave performance measurement of InP powder under light irradiation

In this paper, a coaxial cavity for investigating the effect of light irradiation on the microwave performance of semiconductor material is proposed. The photosensitive material used is indium phosphide (InP) powder and the light source is a power tunable signal source with a working wavelength of 808nm. In this experiment, we study the microwave characteristics of InP powder under light irradiation power of 10mW, 50mW, 100mW, and 250mW, respectively. The measurement results show that the microwave properties of InP powder have a manifest offset behavior under different irradiation. According to effective experimental method and theoretical analysis, we conclude that the change of the microwave properties is caused by the electron energy level transition in InP material.