Determinación del ensanchamiento in homogéneo en pozos cuánticos de InGaAs/InAlAs por fotoluminiscencia

The InGaAs/InAlAs quantum wells offer a huge potential as semiconductor lasers, but factors as interface roughness, internal defects, localized pressures or local electrical fields alter the laser light beam width and consequently the loss of intensity and coherence. The inhomogeneous broadening was studied in the photoluminescence spectra in the InGaAs/InAlAs. It was found that the presence of volumetric and not superficial defects is those responsible for the formation of the inhomogeneous broadening