Ionic mobility and attenuation of ultrasound in doped cerium trifluoride crystals

Dielectric properties of CeF3 crystals doped by aluminum, erbium, and holmium were studied in the temperature range of 290–450 K and frequency range of 25 Hz-1 MHz. Cole-Cole diagrams are constructed. An equivalent circuit consisting of a resistance, capacitance and CPE element is suggested for interpretation of the obtained results. Ionic movement parameters are determined as dependent on the temperature. An acoustooptic method was used to measure ultrasound attenuation in the frequency range of 200–800 MHz.